IRF830STRR
- Mfr.Part #
- IRF830STRR
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 4.5A D2PAK
- Stock
- 13,281
- In Stock :
- 13,281
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- Unknown
- Vgs (Max) :
- ±20V
- Terminal Position :
- Single
- Power Dissipation-Max :
- 3.1W Ta 74W Tc
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 500V
- Input Capacitance (Ciss) (Max) @ Vds :
- 610pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 2.7A, 10V
- JESD-609 Code :
- e0
- Continuous Drain Current (ID) :
- 4.5A
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Tc
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2016
- DS Breakdown Voltage-Min :
- 500V
- Terminal Finish :
- TIN LEAD
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- Pin Count :
- 4
- Datasheets
- IRF830STRR
N-Channel Tape & Reel (TR) 1.5 Ω @ 2.7A, 10V ±20V 610pF @ 25V 38nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF830STRR Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 610pF @ 25V.This device conducts a continuous drain current (ID) of 4.5A, which is the maximum continuous current transistor can conduct.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF830STRR Features
a continuous drain current (ID) of 4.5A
a 500V drain to source voltage (Vdss)
IRF830STRR Applications
There are a lot of Vishay Siliconix
IRF830STRR applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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