IRF830STRLPBF
- Mfr.Part #
- IRF830STRLPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 4.5A D2PAK
- Stock
- 18,206
- In Stock :
- 18,206
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 8.2 ns
- Turn-Off Delay Time :
- 42 ns
- Rds On (Max) @ Id, Vgs :
- 1.5Ohm @ 2.7A, 10V
- Mounting Type :
- Surface Mount
- Width :
- 9.65mm
- Lead Free :
- Lead Free
- Drain to Source Resistance :
- 1.5Ohm
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Max Operating Temperature :
- 150°C
- Height :
- 4.83mm
- Rise Time :
- 16ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- D2PAK
- Input Capacitance (Ciss) (Max) @ Vds :
- 610pF @ 25V
- Rds On Max :
- 1.5 Ω
- Min Operating Temperature :
- -55°C
- Element Configuration :
- Single
- Weight :
- 1.437803g
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Fall Time (Typ) :
- 16 ns
- Published :
- 2017
- Resistance :
- 1.5Ohm
- Number of Channels :
- 1
- Power Dissipation :
- 3.1W
- Drain to Source Voltage (Vdss) :
- 500V
- FET Type :
- N-Channel
- Factory Lead Time :
- 11 Weeks
- Input Capacitance :
- 610pF
- Radiation Hardening :
- No
- Length :
- 10.67mm
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Power Dissipation-Max :
- 74W Tc
- Continuous Drain Current (ID) :
- 4.5A
- Datasheets
- IRF830STRLPBF
N-Channel Tape & Reel (TR) 1.5Ohm @ 2.7A, 10V ±20V 610pF @ 25V 38nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF830STRLPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 610pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4.5A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 42 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 1.5Ohm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8.2 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF830STRLPBF Features
a continuous drain current (ID) of 4.5A
the turn-off delay time is 42 ns
single MOSFETs transistor is 1.5Ohm
a 500V drain to source voltage (Vdss)
IRF830STRLPBF Applications
There are a lot of Vishay Siliconix
IRF830STRLPBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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