IRF830STRL
- Mfr.Part #
- IRF830STRL
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 4.5A D2PAK
- Stock
- 8,119
- In Stock :
- 8,119
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 16ns
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 500V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Max Operating Temperature :
- 150°C
- Width :
- 9.65mm
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 42 ns
- Supplier Device Package :
- D2PAK
- Turn On Delay Time :
- 8.2 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Weight :
- 1.437803g
- Element Configuration :
- Single
- Drain to Source Resistance :
- 1.5Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Continuous Drain Current (ID) :
- 4.5A
- RoHS Status :
- Non-RoHS Compliant
- Length :
- 10.67mm
- Rds On Max :
- 1.5 Ω
- Published :
- 2016
- FET Type :
- N-Channel
- Input Capacitance :
- 610pF
- Rds On (Max) @ Id, Vgs :
- 1.5Ohm @ 2.7A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 3.1W Ta 74W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Fall Time (Typ) :
- 16 ns
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 610pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Tc
- Height :
- 4.83mm
- Min Operating Temperature :
- -55°C
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IRF830STRL
N-Channel Tape & Reel (TR) 1.5Ohm @ 2.7A, 10V ±20V 610pF @ 25V 38nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF830STRL Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 610pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4.5A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 42 ns.This device has a drain-to-source resistance of 1.5Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.2 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF830STRL Features
a continuous drain current (ID) of 4.5A
the turn-off delay time is 42 ns
single MOSFETs transistor is 1.5Ohm
a 500V drain to source voltage (Vdss)
IRF830STRL Applications
There are a lot of Vishay Siliconix
IRF830STRL applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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