IRF830S
- Mfr.Part #
- IRF830S
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 4.5A D2PAK
- Stock
- 22,453
- In Stock :
- 22,453
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55°C
- Number of Channels :
- 1
- Length :
- 10.67mm
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 9.65mm
- Input Capacitance :
- 610pF
- Fall Time (Typ) :
- 16 ns
- Published :
- 2016
- Rise Time :
- 16ns
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 610pF @ 25V
- Voltage - Rated DC :
- 500V
- Power Dissipation-Max :
- 3.1W Ta 74W Tc
- Lead Free :
- Contains Lead
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn On Delay Time :
- 8.2 ns
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On Max :
- 1.5 Ω
- Weight :
- 1.437803g
- Current Rating :
- 1.5A
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Drain to Source Resistance :
- 1.5Ohm
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 500V
- Rds On (Max) @ Id, Vgs :
- 1.5Ohm @ 2.7A, 10V
- Drain to Source Voltage (Vdss) :
- 500V
- Supplier Device Package :
- D2PAK
- Continuous Drain Current (ID) :
- 4.5A
- Max Operating Temperature :
- 150°C
- Turn-Off Delay Time :
- 42 ns
- Packaging :
- Tube
- Height :
- 4.83mm
- Datasheets
- IRF830S
N-Channel Tube 1.5Ohm @ 2.7A, 10V ±20V 610pF @ 25V 38nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF830S Overview
A device's maximal input capacitance is 610pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 42 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.5Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF830S Features
a continuous drain current (ID) of 4.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 42 ns
single MOSFETs transistor is 1.5Ohm
a 500V drain to source voltage (Vdss)
IRF830S Applications
There are a lot of Vishay Siliconix
IRF830S applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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