IRF830PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

Unknown

Power Dissipation-Max :

74W Tc

Drain to Source Resistance :

1.5Ohm

Length :

10.41mm

Published :

2017

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 2.7A, 10V

Height :

9.01mm

Number of Channels :

1

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Input Capacitance :

610pF

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Threshold Voltage :

4V

Power Dissipation :

74W

Continuous Drain Current (ID) :

4.5A

Recovery Time :

640 ns

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 25V

Weight :

6.000006g

Turn-Off Delay Time :

42 ns

Rise Time :

16ns

Package / Case :

TO-220-3

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Supplier Device Package :

TO-220AB

Packaging :

Tube

Drain to Source Voltage (Vdss) :

500V

Voltage - Rated DC :

500V

Element Configuration :

Single

Max Operating Temperature :

150°C

Contact Plating :

Tin

FET Type :

N-Channel

Resistance :

1.5Ohm

Factory Lead Time :

11 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Turn On Delay Time :

8.2 ns

Nominal Vgs :

4 V

Lead Free :

Lead Free

Rds On Max :

1.5 Ω

Fall Time (Typ) :

16 ns

Drain to Source Breakdown Voltage :

500V

Current Rating :

4.5A

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Width :

4.7mm