IRF830LPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2017

Fall Time (Typ) :

16 ns

Packaging :

Tube

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 25V

Continuous Drain Current (ID) :

11A

Number of Pins :

3

Resistance :

1.5Ohm

Turn On Delay Time :

8.2 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

3.1W Ta 74W Tc

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Element Configuration :

Single

Case Connection :

DRAIN

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Height :

9.01mm

Length :

10.41mm

Number of Elements :

1

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Vgs (Max) :

±20V

Width :

4.7mm

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

42 ns

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.7A, 10V

Number of Terminations :

3

Number of Channels :

1

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

4.5A

Weight :

6.000006g

Drain to Source Breakdown Voltage :

500V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

16ns