IRF830L

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Power Dissipation-Max :

3.1W Ta 74W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Terminal Position :

Single

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

500V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Mount :

Through Hole

Packaging :

Tube

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 25V

JEDEC-95 Code :

TO-220AB

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Published :

2016

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

500V

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Number of Channels :

1

Continuous Drain Current (ID) :

4.5A

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Reach Compliance Code :

Unknown

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.7A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Weight :

1.437803g

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V