IRF830BPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Packaging :

Tube

Number of Elements :

1

Drain to Source Breakdown Voltage :

500V

Factory Lead Time :

8 Weeks

Mount :

Through Hole

Power Dissipation-Max :

104W Tc

Transistor Application :

SWITCHING

Fall Time (Typ) :

16 ns

Current - Continuous Drain (Id) @ 25°C :

5.3A Tc

Weight :

6.000006g

Mounting Type :

Through Hole

Turn On Delay Time :

8.2 ns

Continuous Drain Current (ID) :

5.3A

Package / Case :

TO-220-3

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN OVER NICKEL

Number of Pins :

3

Published :

2011

Operating Temperature :

-55°C~150°C TJ

Rise Time :

16ns

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.5A, 10V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

JESD-609 Code :

e3

Radiation Hardening :

No

Turn-Off Delay Time :

42 ns

Number of Channels :

1