IRF830ASTRL
- Mfr.Part #
- IRF830ASTRL
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 5A D2PAK
- Stock
- 22,246
- In Stock :
- 22,246
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Drain to Source Voltage (Vdss) :
- 500V
- Weight :
- 1.437803g
- Continuous Drain Current (ID) :
- 5A
- Width :
- 9.65mm
- Mounting Type :
- Surface Mount
- Rise Time :
- 21ns
- Supplier Device Package :
- D2PAK
- Input Capacitance (Ciss) (Max) @ Vds :
- 620pF @ 25V
- Drain to Source Resistance :
- 1.4Ohm
- Length :
- 10.67mm
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Vgs (Max) :
- ±30V
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Turn On Delay Time :
- 10 ns
- Published :
- 2016
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -55°C
- Drain to Source Breakdown Voltage :
- 500V
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Turn-Off Delay Time :
- 21 ns
- Power Dissipation-Max :
- 3.1W Ta 74W Tc
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance :
- 620pF
- Rds On (Max) @ Id, Vgs :
- 1.4Ohm @ 3A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Packaging :
- Tape and Reel (TR)
- Height :
- 4.83mm
- Rds On Max :
- 1.4 Ω
- Fall Time (Typ) :
- 15 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IRF830ASTRL
N-Channel Tape & Reel (TR) 1.4Ohm @ 3A, 10V ±30V 620pF @ 25V 24nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF830ASTRL Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 620pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.This device has a drain-to-source resistance of 1.4Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF830ASTRL Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 1.4Ohm
a 500V drain to source voltage (Vdss)
IRF830ASTRL Applications
There are a lot of Vishay Siliconix
IRF830ASTRL applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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