IRF830ASPBF
- Mfr.Part #
- IRF830ASPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 5A D2PAK
- Stock
- 6,915
- In Stock :
- 6,915
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 21ns
- Turn On Delay Time :
- 10 ns
- Vgs (Max) :
- ±30V
- Rds On Max :
- 1.4 Ω
- Resistance :
- 1.4Ohm
- Max Operating Temperature :
- 150°C
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Power Dissipation :
- 3.1W
- Rds On (Max) @ Id, Vgs :
- 1.4Ohm @ 3A, 10V
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Termination :
- SMD/SMT
- Packaging :
- Tube
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 5A
- Gate to Source Voltage (Vgs) :
- 30V
- Published :
- 2011
- Nominal Vgs :
- 4.5 V
- Length :
- 10.67mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 620pF @ 25V
- Width :
- 9.65mm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain to Source Resistance :
- 1.4Ohm
- Drain to Source Voltage (Vdss) :
- 500V
- Element Configuration :
- Single
- Supplier Device Package :
- D2PAK
- Fall Time (Typ) :
- 15 ns
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Mount :
- Surface Mount
- Dual Supply Voltage :
- 500V
- Weight :
- 1.437803g
- Height :
- 4.83mm
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Factory Lead Time :
- 11 Weeks
- Turn-Off Delay Time :
- 21 ns
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 3.1W Ta 74W Tc
- Input Capacitance :
- 620pF
- Datasheets
- IRF830ASPBF
N-Channel Tube 1.4Ohm @ 3A, 10V ±30V 620pF @ 25V 24nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF830ASPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 620pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 21 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 1.4Ohm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF830ASPBF Features
a continuous drain current (ID) of 5A
the turn-off delay time is 21 ns
single MOSFETs transistor is 1.4Ohm
a 500V drain to source voltage (Vdss)
IRF830ASPBF Applications
There are a lot of Vishay Siliconix
IRF830ASPBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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