IRF830ALPBF

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Mfr.Part #
IRF830ALPBF
Manufacturer
Vishay
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 500V 5A I2PAK
Stock
8,633
In Stock :
8,633

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On Max :
1.4 Ω
FET Type :
N-Channel
Number of Elements :
1
Element Configuration :
Single
Packaging :
Tube
Published :
2016
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
RoHS Status :
ROHS3 Compliant
Length :
10.41mm
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Operating Temperature :
150°C
Drain to Source Resistance :
1.4Ohm
Drain to Source Voltage (Vdss) :
500V
Threshold Voltage :
4.5V
Supplier Device Package :
I2PAK
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Weight :
2.387001g
Rise Time :
21ns
REACH SVHC :
Unknown
Height :
9.65mm
Vgs (Max) :
±30V
Number of Pins :
3
Width :
4.7mm
Turn-Off Delay Time :
21 ns
Factory Lead Time :
8 Weeks
Turn On Delay Time :
10 ns
Number of Channels :
1
Rds On (Max) @ Id, Vgs :
1.4Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C :
5A Tc
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
3.1W
Input Capacitance :
620pF
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Min Operating Temperature :
-55°C
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
5A
Resistance :
1.4Ohm
Gate to Source Voltage (Vgs) :
30V
Power Dissipation-Max :
3.1W Ta 74W Tc
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
620pF @ 25V
Fall Time (Typ) :
15 ns
Radiation Hardening :
No
Datasheets
IRF830ALPBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF830ALPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, Mounting Type:Through Hole, Number of Pins:3, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, IRF830ALPBF pinout, IRF830ALPBF datasheet PDF, IRF830ALPBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF830ALPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF830ALPBF


N-Channel Tube 1.4Ohm @ 3A, 10V ±30V 620pF @ 25V 24nC @ 10V 500V TO-262-3 Long Leads, I2Pak, TO-262AA

IRF830ALPBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 620pF @ 25V.This device conducts a continuous drain current (ID) of 5A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 21 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 1.4Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4.5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRF830ALPBF Features


a continuous drain current (ID) of 5A
the turn-off delay time is 21 ns
single MOSFETs transistor is 1.4Ohm
a threshold voltage of 4.5V
a 500V drain to source voltage (Vdss)


IRF830ALPBF Applications


There are a lot of Vishay Siliconix
IRF830ALPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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