IRF830AL

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Mfr.Part #
IRF830AL
Manufacturer
Vishay
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 500V 5A I2PAK
Stock
6,138
In Stock :
6,138

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Max Operating Temperature :
150°C
Drain to Source Breakdown Voltage :
500V
Packaging :
Tube
Published :
2017
Min Operating Temperature :
-55°C
Weight :
2.387001g
Turn-Off Delay Time :
21 ns
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
9.65mm
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Turn On Delay Time :
10 ns
Mount :
Through Hole
Gate to Source Voltage (Vgs) :
30V
Supplier Device Package :
I2PAK
Current - Continuous Drain (Id) @ 25°C :
5A Tc
Rds On (Max) @ Id, Vgs :
1.4Ohm @ 3A, 10V
Rds On Max :
1.4 Ω
Rise Time :
21ns
Drain to Source Voltage (Vdss) :
500V
Input Capacitance (Ciss) (Max) @ Vds :
620pF @ 25V
Number of Channels :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Length :
10.41mm
Mounting Type :
Through Hole
Fall Time (Typ) :
15 ns
Drain to Source Resistance :
1.4Ohm
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
5A
Vgs (Max) :
±30V
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
RoHS Status :
Non-RoHS Compliant
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Width :
4.7mm
Power Dissipation-Max :
3.1W Ta 74W Tc
Input Capacitance :
620pF
Datasheets
IRF830AL
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF830AL from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, IRF830AL pinout, IRF830AL datasheet PDF, IRF830AL amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF830AL ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF830AL


N-Channel Tube 1.4Ohm @ 3A, 10V ±30V 620pF @ 25V 24nC @ 10V 500V TO-262-3 Long Leads, I2Pak, TO-262AA

IRF830AL Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 620pF @ 25V.This device conducts a continuous drain current (ID) of 5A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 21 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 1.4Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRF830AL Features


a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 1.4Ohm
a 500V drain to source voltage (Vdss)


IRF830AL Applications


There are a lot of Vishay Siliconix
IRF830AL applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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