IRF8308MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 4.5V

Published :

2011

Surface Mount :

yes

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

DS Breakdown Voltage-Min :

30V

Number of Elements :

1

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-40°C~150°C TJ

Vgs (Max) :

±20V

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

12 mJ

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 27A, 10V

Drain Current-Max (Abs) (ID) :

27A

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

4404pF @ 15V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

BOTTOM

Transistor Application :

SWITCHING

JESD-609 Code :

e1

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0035Ohm

Pulsed Drain Current-Max (IDM) :

212A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-XBCC-N3

Current - Continuous Drain (Id) @ 25°C :

27A Ta 150A Tc

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

NO LEAD

Power Dissipation-Max :

2.8W Ta 89W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

DirectFET™ Isometric MX

Mounting Type :

Surface Mount

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

13 Weeks

Transistor Element Material :

SILICON