IRF8306MTRPBF
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- Mfr.Part #
- IRF8306MTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MX
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 23A DIRECTFET
- Stock
- 16,006
- In Stock ：
- 16,006
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 23A
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 4.5V
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 19 ns
- Drain to Source Breakdown Voltage :
- 30V
- FET Type :
- N-Channel
- Operating Temperature :
- -40°C~150°C TJ
- Power Dissipation-Max :
- 2.1W Ta 75W Tc
- Power Dissipation :
- 75W
- Packaging :
- Tape and Reel (TR)
- FET Feature :
- Schottky Diode (Body)
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 19 ns
- Vgs(th) (Max) @ Id :
- 2.35V @ 100μA
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 2.5m Ω @ 23A, 10V
- RoHS Status :
- RoHS Compliant
- Series :
- HEXFET®
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 23A Ta 140A Tc
- Radiation Hardening :
- No
- Turn On Delay Time :
- 16 ns
- Rise Time :
- 34ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4110pF @ 15V
- Published :
- 2007
- Configuration :
- Single
- Package / Case :
- DirectFET™ Isometric MX
- Vgs (Max) :
- ±20V
- Number of Pins :
- 7
- Datasheets
- IRF8306MTRPBF
N-Channel Tape & Reel (TR) 2.5m Ω @ 23A, 10V ±20V 4110pF @ 15V 38nC @ 4.5V DirectFET™ Isometric MX
IRF8306MTRPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4110pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 19 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 16 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IRF8306MTRPBF Features
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 19 ns
IRF8306MTRPBF Applications
There are a lot of Infineon Technologies
IRF8306MTRPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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