IRF8306MTR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

4110pF @ 15V

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

23A

Gate to Source Voltage (Vgs) :

20V

Rds On Max :

2.5 mΩ

Number of Elements :

1

Vgs (Max) :

±20V

FET Type :

N-Channel

Turn On Delay Time :

16 ns

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 4.5V

Operating Temperature :

-40°C~150°C TJ

FET Feature :

Schottky Diode (Body)

Drain to Source Breakdown Voltage :

30V

Supplier Device Package :

DIRECTFET™ MX

Drain to Source Resistance :

25mOhm

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

2.5mOhm @ 23A, 10V

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Radiation Hardening :

No

Max Operating Temperature :

150°C

Rise Time :

34ns

Mounting Type :

Surface Mount

Fall Time (Typ) :

19 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

2.1W Ta 75W Tc

Drain to Source Voltage (Vdss) :

30V

Power Dissipation :

2.1W

Number of Pins :

7

Published :

2013

Input Capacitance :

4.11nF

Turn-Off Delay Time :

19 ns

Package / Case :

DirectFET™ Isometric MX

Current - Continuous Drain (Id) @ 25°C :

23A Ta 140A Tc

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C