IRF8304MTR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-40°C

Continuous Drain Current (ID) :

170A

Turn-Off Delay Time :

19 ns

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 15V

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Number of Pins :

7

Published :

2013

Rds On Max :

2.2 MΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

13 ns

Package / Case :

DirectFET™ Isometric MX

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 4.5V

Input Capacitance :

4.7nF

Drain to Source Resistance :

3.2mOhm

FET Type :

N-Channel

Radiation Hardening :

No

Mount :

Surface Mount

Series :

HEXFET®

Supplier Device Package :

DIRECTFET™ MX

Drain to Source Breakdown Voltage :

30V

Vgs (Max) :

±20V

Turn On Delay Time :

16 ns

Rise Time :

22ns

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

2.8W Ta 100W Tc

Rds On (Max) @ Id, Vgs :

2.2mOhm @ 28A, 10V

Current - Continuous Drain (Id) @ 25°C :

28A Ta 170A Tc

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-40°C~150°C TJ

Power Dissipation :

2.8W