IRF830

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

6.000006g

Rise Time :

21ns

Drain to Source Breakdown Voltage :

500V

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Number of Pins :

3

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1.4Ohm @ 3A, 10V

Fall Time (Typ) :

15 ns

Published :

2003

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

30V

Input Capacitance :

620pF

Max Operating Temperature :

150°C

Drain to Source Resistance :

1.4Ohm

Lead Free :

Contains Lead

Min Operating Temperature :

-55°C

RoHS Status :

Non-RoHS Compliant

Length :

10.41mm

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Height :

9.01mm

Packaging :

Tube

Turn-Off Delay Time :

21 ns

Width :

4.7mm

Turn On Delay Time :

10 ns

Voltage - Rated DC :

500V

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Continuous Drain Current (ID) :

5A

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Rds On Max :

1.4 Ω

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

49 Weeks

Power Dissipation-Max :

74W Tc

Supplier Device Package :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Vgs (Max) :

±30V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

500V

Power Dissipation :

74W

Current Rating :

5A