IRF830

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Mfr.Part #
IRF830
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 4.5A TO220AB
Stock
33,496
In Stock :
33,496

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
620pF @ 25V
Drain to Source Breakdown Voltage :
500V
Rds On (Max) @ Id, Vgs :
1.4Ohm @ 3A, 10V
Lead Free :
Contains Lead
Rds On Max :
1.4 Ω
Rise Time :
21ns
Turn-Off Delay Time :
21 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
10.41mm
Drain to Source Resistance :
1.4Ohm
Continuous Drain Current (ID) :
5A
Power Dissipation-Max :
74W Tc
Operating Temperature :
-55°C~150°C TJ
Height :
9.01mm
Supplier Device Package :
TO-220AB
Turn On Delay Time :
10 ns
Mounting Type :
Through Hole
Max Operating Temperature :
150°C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±30V
Min Operating Temperature :
-55°C
RoHS Status :
Non-RoHS Compliant
Gate to Source Voltage (Vgs) :
30V
Number of Channels :
1
Drain to Source Voltage (Vdss) :
500V
Voltage - Rated DC :
500V
FET Type :
N-Channel
Input Capacitance :
620pF
Weight :
6.000006g
Number of Pins :
3
Current Rating :
5A
Power Dissipation :
74W
Published :
2003
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Fall Time (Typ) :
15 ns
Factory Lead Time :
49 Weeks
Width :
4.7mm
Mount :
Through Hole
Package / Case :
TO-220-3
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C :
5A Tc
Element Configuration :
Single
Datasheets
IRF830
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF830 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1, Number of Pins:3, Package / Case:TO-220-3, IRF830 pinout, IRF830 datasheet PDF, IRF830 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF830 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF830


N-Channel Tube 1.4Ohm @ 3A, 10V ±30V 620pF @ 25V 24nC @ 10V 500V TO-220-3

IRF830A Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 620pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.This device has a drain-to-source resistance of 1.4Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRF830A Features


a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 1.4Ohm
a 500V drain to source voltage (Vdss)


IRF830A Applications


There are a lot of Vishay Siliconix
IRF830A applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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