IRF8252TRPBF
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- Mfr.Part #
- IRF8252TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 25A 8SO
- Stock
- 88,730
- In Stock ：
- 88,730
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 19 ns
- RoHS Status :
- RoHS Compliant
- Contact Plating :
- Tin
- Height :
- 1.4986mm
- Gate Charge (Qg) (Max) @ Vgs :
- 53nC @ 4.5V
- Rise Time :
- 32ns
- Drain to Source Breakdown Voltage :
- 25V
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Resistance :
- 2.7MOhm
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 2.7m Ω @ 25A, 10V
- Configuration :
- Single
- Mount :
- Surface Mount
- Turn On Delay Time :
- 23 ns
- Number of Pins :
- 8
- Power Dissipation :
- 2.5W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- HEXFET®
- Number of Elements :
- 1
- Factory Lead Time :
- 20 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5305pF @ 13V
- Continuous Drain Current (ID) :
- 25A
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 2.5W Ta
- Width :
- 3.9878mm
- Current - Continuous Drain (Id) @ 25°C :
- 25A Ta
- Fall Time (Typ) :
- 12 ns
- Length :
- 4.9784mm
- Vgs(th) (Max) @ Id :
- 2.35V @ 100μA
- FET Type :
- N-Channel
- Published :
- 2008
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IRF8252TRPBF
N-Channel Tape & Reel (TR) 2.7m Ω @ 25A, 10V ±20V 5305pF @ 13V 53nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
IRF8252TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5305pF @ 13V.This device conducts a continuous drain current (ID) of 25A, which is the maximum continuous current transistor can conduct.Using VGS=25V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 25V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 19 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 23 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRF8252TRPBF Features
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 19 ns
IRF8252TRPBF Applications
There are a lot of Infineon Technologies
IRF8252TRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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