IRF8252PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Qualification Status :

Not Qualified

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

5305pF @ 13V

Reach Compliance Code :

Compliant

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 4.5V

Drain to Source Voltage (Vdss) :

25V

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pulsed Drain Current-Max (IDM) :

200A

Published :

2004

Drain-source On Resistance-Max :

0.0027Ohm

Vgs (Max) :

±20V

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 25A, 10V

JESD-30 Code :

R-PDSO-G8

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

HEXFET®

Packaging :

Tube

DS Breakdown Voltage-Min :

25V

Power Dissipation-Max :

2.5W Ta

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Terminal Position :

Dual

FET Type :

N-Channel

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

25A

Current - Continuous Drain (Id) @ 25°C :

25A Ta

Avalanche Energy Rating (Eas) :

231 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE