IRF8252PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2004

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

25A Ta

Avalanche Energy Rating (Eas) :

231 mJ

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

25V

Drain-source On Resistance-Max :

0.0027Ohm

Vgs (Max) :

±20V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 4.5V

DS Breakdown Voltage-Min :

25V

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Number of Terminations :

8

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

25A

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Series :

HEXFET®

Mounting Type :

Surface Mount

Number of Elements :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G8

Pulsed Drain Current-Max (IDM) :

200A

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

2.5W Ta

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 25A, 10V

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

5305pF @ 13V

FET Type :

N-Channel