IRF822

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

500 V

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

360 pF @ 25 V

Mounting Type :

Through Hole

Terminal Form :

THROUGH-HOLE

FET Type :

N-Channel

Package :

Bulk

Drain-source On Resistance-Max :

4 Ω

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package Shape :

RECTANGULAR

Operating Temperature :

-55°C ~ 150°C (TJ)

Surface Mount :

No

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

500 V

Terminal Position :

Single

Qualification Status :

COMMERCIAL

Number of Elements :

1

Number of Terminals :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

7 A

Drive Voltage (Max Rds On, Min Rds On) :

10V

Supplier Device Package :

TO-220AB

Power Dissipation (Max) :

50W (Tc)

Current - Continuous Drain (Id) @ 25°C :

2.2A (Tc)

Terminal Finish :

TIN LEAD

JESD-609 Code :

e0

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

19 nC @ 10 V

Vgs (Max) :

±20V

Manufacturer :

Rochester Electronics LLC

Rds On (Max) @ Id, Vgs :

4Ohm @ 1.4A, 10V

Product Status :

Active

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

No

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Series :

-

FET Feature :

-

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE