IRF820STRRPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

500V

Vgs (Max) :

±20V

Mount :

Surface Mount

Number of Channels :

1

Power Dissipation-Max :

3.1W Ta 50W Tc

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Rise Time :

8.6ns

Length :

10.67mm

Power Dissipation :

3.1W

Mounting Type :

Surface Mount

Weight :

1.437803g

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

500V

Published :

2016

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

3Ohm @ 1.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Fall Time (Typ) :

16 ns

Turn-Off Delay Time :

33 ns

Turn On Delay Time :

8 ns

FET Type :

N-Channel

Height :

4.83mm

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 25V

Max Operating Temperature :

150°C

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

D2PAK

Input Capacitance :

360pF

Continuous Drain Current (ID) :

2.5A

Number of Elements :

1

Drain to Source Resistance :

3Ohm

Width :

9.65mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On Max :

3 Ω