IRF820STRR
- Mfr.Part #
- IRF820STRR
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 2.5A D2PAK
- Stock
- 1,645
- In Stock :
- 1,645
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 9.65mm
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 2.5A
- Turn On Delay Time :
- 8 ns
- Fall Time (Typ) :
- 16 ns
- Height :
- 4.83mm
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- Number of Channels :
- 1
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- D2PAK
- Power Dissipation :
- 3.1W
- Length :
- 10.67mm
- Weight :
- 1.437803g
- Vgs (Max) :
- ±20V
- Published :
- 2016
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Rise Time :
- 8.6ns
- Min Operating Temperature :
- -55°C
- Drain to Source Voltage (Vdss) :
- 500V
- Drain to Source Resistance :
- 3Ohm
- Radiation Hardening :
- No
- Max Operating Temperature :
- 150°C
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Tc
- Drain to Source Breakdown Voltage :
- 500V
- Turn-Off Delay Time :
- 33 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Factory Lead Time :
- 12 Weeks
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance :
- 360pF
- Power Dissipation-Max :
- 3.1W Ta 50W Tc
- Rds On Max :
- 3 Ω
- Datasheets
- IRF820STRR
N-Channel Tape & Reel (TR) 3Ohm @ 1.5A, 10V ±20V 360pF @ 25V 24nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF820STRRPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 360pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 33 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF820STRRPBF Features
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 3Ohm
a 500V drain to source voltage (Vdss)
IRF820STRRPBF Applications
There are a lot of Vishay Siliconix
IRF820STRRPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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