IRF820STRLPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

3.1W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

3Ohm @ 1.5A, 10V

Max Operating Temperature :

150°C

Height :

4.83mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

8.6ns

Weight :

1.437803g

Number of Channels :

1

Turn On Delay Time :

8 ns

Rds On Max :

3 Ω

Mounting Type :

Surface Mount

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

500V

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Fall Time (Typ) :

16 ns

Length :

10.67mm

Input Capacitance :

360pF

Width :

9.65mm

Drain to Source Voltage (Vdss) :

500V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Turn-Off Delay Time :

33 ns

Min Operating Temperature :

-55°C

Lead Free :

Lead Free

Power Dissipation-Max :

3.1W Ta 50W Tc

Supplier Device Package :

D2PAK

Drain to Source Resistance :

3Ohm

Continuous Drain Current (ID) :

2.5A

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Published :

2015

Element Configuration :

Single

Resistance :

3Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Factory Lead Time :

12 Weeks