IRF820STRL
- Mfr.Part #
- IRF820STRL
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 2.5A D2PAK
- Stock
- 13,633
- In Stock :
- 13,633
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 500V
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- Max Operating Temperature :
- 150°C
- FET Type :
- N-Channel
- Number of Channels :
- 1
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 2.5A
- Power Dissipation-Max :
- 3.1W Ta 50W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Tc
- Vgs (Max) :
- ±20V
- Input Capacitance :
- 360pF
- Rise Time :
- 8.6ns
- Drain to Source Breakdown Voltage :
- 500V
- Element Configuration :
- Single
- Turn On Delay Time :
- 8 ns
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 1.5A, 10V
- Supplier Device Package :
- D2PAK
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Published :
- 2016
- Turn-Off Delay Time :
- 33 ns
- Fall Time (Typ) :
- 16 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Weight :
- 1.437803g
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Continuous Drain Current (ID) :
- 2.5A
- Length :
- 10.67mm
- Lead Free :
- Contains Lead
- Width :
- 9.65mm
- Height :
- 4.83mm
- Min Operating Temperature :
- -55°C
- Drain to Source Resistance :
- 3Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 500V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature :
- -55°C~150°C TJ
- Rds On Max :
- 3 Ω
- Datasheets
- IRF820STRL
N-Channel Tape & Reel (TR) 3Ohm @ 1.5A, 10V ±20V 360pF @ 25V 24nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF820STRL Overview
A device's maximum input capacitance is 360pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 33 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 3Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF820STRL Features
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 3Ohm
a 500V drain to source voltage (Vdss)
IRF820STRL Applications
There are a lot of Vishay Siliconix
IRF820STRL applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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