IRF820SPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

3Ohm

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Resistance :

3Ohm

Turn On Delay Time :

8 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Number of Elements :

1

Power Dissipation-Max :

3.1W Ta 50W Tc

Weight :

1.437803g

Turn-Off Delay Time :

33 ns

Supplier Device Package :

D2PAK

Drain to Source Breakdown Voltage :

500V

Rds On (Max) @ Id, Vgs :

3Ohm @ 1.5A, 10V

Factory Lead Time :

12 Weeks

Drain to Source Voltage (Vdss) :

500V

Fall Time (Typ) :

16 ns

Gate to Source Voltage (Vgs) :

20V

Published :

2016

Element Configuration :

Single

Voltage - Rated DC :

500V

Min Operating Temperature :

-55°C

Input Capacitance :

360pF

Power Dissipation :

3.1W

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Rds On Max :

3 Ω

Radiation Hardening :

No

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Length :

10.67mm

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

2.5A

Number of Pins :

3

Rise Time :

8.8ns

Current Rating :

2.5A

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Width :

9.65mm

Height :

4.83mm

Vgs (Max) :

±20V