IRF820PBF-BE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Brand :

Vishay / Siliconix

RoHS :

Details

Channel Mode :

Enhancement

Configuration :

Single

Number of Channels :

1 Channel

Product Type :

MOSFET

FET Type :

N-Channel

Power Dissipation (Max) :

50W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

24 nC @ 10 V

Supplier Device Package :

TO-220AB

Maximum Operating Temperature :

+ 150 C

Operating Temperature :

-55°C ~ 150°C (TJ)

Transistor Polarity :

N-Channel

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

2.5A (Tc)

Drain to Source Voltage (Vdss) :

500 V

Series :

-

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Style :

Through Hole

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

360 pF @ 25 V

Rds On (Max) @ Id, Vgs :

3Ohm @ 1.5A, 10V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Base Product Number :

IRF820

Transistor Type :

1 N-Channel

Rise Time :

8.6 ns

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Product Status :

Active

Package :

Tube

Vgs (Max) :

±20V

Manufacturer :

Vishay

Subcategory :

MOSFETs

FET Feature :

-