IRF820PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1997

Input Capacitance :

360pF

Packaging :

Tube

Power Dissipation-Max :

50W Tc

Current Rating :

2.5A

REACH SVHC :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Fall Time (Typ) :

16 ns

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 25V

Resistance :

3Ohm

Drain to Source Resistance :

3Ohm

Recovery Time :

520 ns

Number of Channels :

1

Number of Elements :

1

Drain to Source Breakdown Voltage :

500V

Max Operating Temperature :

150°C

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

8.6ns

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

20V

Height :

9.01mm

FET Type :

N-Channel

Turn On Delay Time :

8 ns

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

500V

Supplier Device Package :

TO-220AB

Factory Lead Time :

8 Weeks

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

500V

Package / Case :

TO-220-3

Mount :

Through Hole

Element Configuration :

Single

Continuous Drain Current (ID) :

2.5A

Rds On (Max) @ Id, Vgs :

3Ohm @ 1.5A, 10V

Weight :

6.000006g

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

33 ns

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Length :

10.41mm

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Width :

4.7mm

Threshold Voltage :

4V

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Power Dissipation :

50W

Rds On Max :

3 Ω

Nominal Vgs :

4 V