IRF820LPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

500V

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Continuous Drain Current (ID) :

2.5A

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

3.1W Ta 50W Tc

Mounting Type :

Through Hole

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

3 Ω @ 1.5A, 10V

Length :

10.41mm

Turn On Delay Time :

8 ns

Factory Lead Time :

12 Weeks

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Width :

4.7mm

Drain-source On Resistance-Max :

3Ohm

Pbfree Code :

yes

Fall Time (Typ) :

16 ns

Height :

9.01mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

6.000006g

Number of Elements :

1

Number of Pins :

3

Turn-Off Delay Time :

33 ns

Rise Time :

8.6ns

Number of Terminations :

3

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Case Connection :

DRAIN

Mount :

Through Hole