IRF820ASTRR
- Mfr.Part #
- IRF820ASTRR
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 2.5A D2PAK
- Stock
- 34,295
- In Stock :
- 34,295
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Unknown
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Published :
- 2016
- Power Dissipation-Max :
- 50W Tc
- Rds On (Max) @ Id, Vgs :
- 3 Ω @ 1.5A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- RoHS Status :
- Non-RoHS Compliant
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Drain-source On Resistance-Max :
- 3Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 340pF @ 25V
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 2.5A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Avalanche Energy Rating (Eas) :
- 140 mJ
- Drain to Source Voltage (Vdss) :
- 500V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 500V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Tc
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 10A
- Datasheets
- IRF820ASTRR
N-Channel Tape & Reel (TR) 3 Ω @ 1.5A, 10V ±30V 340pF @ 25V 17nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF820ASTRR Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 140 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 340pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.5A amps.As far as peak drain current is concerned, its maximum pulsed current is 10A.The DS breakdown voltage should be maintained above 500V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRF820ASTRR Features
the avalanche energy rating (Eas) is 140 mJ
a continuous drain current (ID) of 2.5A
based on its rated peak drain current 10A.
a 500V drain to source voltage (Vdss)
IRF820ASTRR Applications
There are a lot of Vishay Siliconix
IRF820ASTRR applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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