IRF820ASPBF
- Mfr.Part #
- IRF820ASPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 2.5A D2PAK
- Stock
- 958
- In Stock :
- 958
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Factory Lead Time :
- 8 Weeks
- Number of Channels :
- 1
- Width :
- 9.65mm
- Supplier Device Package :
- D2PAK
- Weight :
- 1.437803g
- Height :
- 4.83mm
- Number of Pins :
- 3
- Max Operating Temperature :
- 150°C
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Continuous Drain Current (ID) :
- 2.5A
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 1.5A, 10V
- Rise Time :
- 12ns
- Input Capacitance :
- 340pF
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 30V
- Length :
- 10.67mm
- Fall Time (Typ) :
- 13 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 340pF @ 25V
- Resistance :
- 3Ohm
- Turn-Off Delay Time :
- 16 ns
- Power Dissipation :
- 50W
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 500V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Published :
- 2011
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Rds On Max :
- 3 Ω
- Turn On Delay Time :
- 8.1 ns
- Drain to Source Resistance :
- 3Ohm
- Power Dissipation-Max :
- 50W Tc
- Vgs (Max) :
- ±30V
- Packaging :
- Tube
- Threshold Voltage :
- 4.5V
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Tc
- REACH SVHC :
- Unknown
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IRF820ASPBF
N-Channel Tube 3Ohm @ 1.5A, 10V ±30V 340pF @ 25V 17nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF820ASPBF Overview
A device's maximal input capacitance is 340pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.5A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 16 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 3Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.1 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4.5V threshold voltage.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF820ASPBF Features
a continuous drain current (ID) of 2.5A
the turn-off delay time is 16 ns
single MOSFETs transistor is 3Ohm
a threshold voltage of 4.5V
a 500V drain to source voltage (Vdss)
IRF820ASPBF Applications
There are a lot of Vishay Siliconix
IRF820ASPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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