IRF820APBF
- Mfr.Part #
- IRF820APBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 2.5A TO220AB
- Stock
- 1,239
- In Stock :
- 1,239
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 3Ohm
- Max Operating Temperature :
- 150°C
- Turn-Off Delay Time :
- 16 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 340pF @ 25V
- Continuous Drain Current (ID) :
- 2.5A
- Recovery Time :
- 500 ns
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- REACH SVHC :
- Unknown
- Package / Case :
- TO-220-3
- Number of Elements :
- 1
- Rds On Max :
- 3 Ω
- Packaging :
- Tube
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Tc
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 1.5A, 10V
- Turn On Delay Time :
- 8.1 ns
- Mount :
- Through Hole
- Width :
- 4.7mm
- Vgs (Max) :
- ±30V
- Height :
- 9.01mm
- Operating Temperature :
- -55°C~150°C TJ
- Nominal Vgs :
- 4.5 V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Input Capacitance :
- 340pF
- Supplier Device Package :
- TO-220AB
- Length :
- 10.41mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 500V
- Resistance :
- 3Ohm
- Lead Free :
- Lead Free
- Published :
- 2004
- Rise Time :
- 12ns
- Element Configuration :
- Single
- Weight :
- 6.000006g
- Number of Channels :
- 1
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 13 ns
- Power Dissipation :
- 50W
- Threshold Voltage :
- 4.5V
- Factory Lead Time :
- 8 Weeks
- Power Dissipation-Max :
- 50W Tc
- Datasheets
- IRF820APBF
N-Channel Tube 3Ohm @ 1.5A, 10V ±30V 340pF @ 25V 17nC @ 10V 500V TO-220-3
IRF820APBF Overview
The maximum input capacitance of this device is 340pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.5A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 16 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 3Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 8.1 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF820APBF Features
a continuous drain current (ID) of 2.5A
the turn-off delay time is 16 ns
single MOSFETs transistor is 3Ohm
a threshold voltage of 4.5V
a 500V drain to source voltage (Vdss)
IRF820APBF Applications
There are a lot of Vishay Siliconix
IRF820APBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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