IRF820AL

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Weight :

2.387001g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Min Operating Temperature :

-55°C

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Power Dissipation-Max :

50W Tc

Drain to Source Voltage (Vdss) :

500V

Supplier Device Package :

I2PAK

Input Capacitance :

340pF

Number of Channels :

1

Vgs (Max) :

±30V

Drain to Source Resistance :

3Ohm

Drain to Source Breakdown Voltage :

500V

RoHS Status :

Non-RoHS Compliant

Length :

10.67mm

Packaging :

Tube

Published :

2017

Mount :

Through Hole

Turn-Off Delay Time :

16 ns

Fall Time (Typ) :

13 ns

FET Type :

N-Channel

Turn On Delay Time :

8.1 ns

Continuous Drain Current (ID) :

2.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

3 Ω

Height :

4.83mm

Max Operating Temperature :

150°C

Rise Time :

12ns

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Width :

9.65mm

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

3Ohm @ 1.5A, 10V