IRF820A
- Mfr.Part #
- IRF820A
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 2.5A TO220AB
- Stock
- 1,458
- In Stock :
- 1,458
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- Unknown
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 340pF @ 25V
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Fall Time (Typ) :
- 13 ns
- Number of Elements :
- 1
- Weight :
- 6.000006g
- Vgs (Max) :
- ±30V
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 16 ns
- Drain to Source Voltage (Vdss) :
- 500V
- Packaging :
- Tube
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 50W Tc
- RoHS Status :
- Non-RoHS Compliant
- Turn On Delay Time :
- 8.1 ns
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Package / Case :
- TO-220-3
- Input Capacitance :
- 340pF
- Height :
- 9.01mm
- Threshold Voltage :
- 4.5V
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Vgs :
- 4.5 V
- Drain to Source Resistance :
- 3Ohm
- Published :
- 2011
- Power Dissipation :
- 50W
- Length :
- 10.41mm
- Gate to Source Voltage (Vgs) :
- 30V
- Continuous Drain Current (ID) :
- 2.5A
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 1.5A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 4.7mm
- Number of Channels :
- 1
- Radiation Hardening :
- No
- Rise Time :
- 12ns
- Supplier Device Package :
- TO-220AB
- Mount :
- Through Hole
- Rds On Max :
- 3 Ω
- Datasheets
- IRF820A
N-Channel Tube 3Ohm @ 1.5A, 10V ±30V 340pF @ 25V 17nC @ 10V 500V TO-220-3
IRF820A Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 340pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2.5A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 16 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 3Ohm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8.1 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4.5V threshold voltage. Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF820A Features
a continuous drain current (ID) of 2.5A
the turn-off delay time is 16 ns
single MOSFETs transistor is 3Ohm
a threshold voltage of 4.5V
a 500V drain to source voltage (Vdss)
IRF820A Applications
There are a lot of Vishay Siliconix
IRF820A applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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