IRF820

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Mfr.Part #
IRF820
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 500V 4A TO220AB
Stock
34,617
In Stock :
34,617

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
500V
Gate to Source Voltage (Vgs) :
20V
Rds On Max :
3 Ω
Continuous Drain Current (ID) :
2.5A
Current - Continuous Drain (Id) @ 25°C :
2.5A Tc
Operating Temperature :
-55°C~150°C TJ
Length :
10.67mm
Lead Free :
Contains Lead
RoHS Status :
Non-RoHS Compliant
Power Dissipation-Max :
3.1W Ta 50W Tc
Drain to Source Resistance :
3Ohm
Max Operating Temperature :
150°C
Input Capacitance (Ciss) (Max) @ Vds :
360pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
4.83mm
Width :
9.65mm
Supplier Device Package :
D2PAK
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
3Ohm @ 1.5A, 10V
Vgs (Max) :
±20V
Turn-Off Delay Time :
33 ns
Rise Time :
8.6ns
Turn On Delay Time :
8 ns
Mount :
Surface Mount
Element Configuration :
Single
Voltage - Rated DC :
500V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FET Type :
N-Channel
Current Rating :
2.5A
Fall Time (Typ) :
16 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Published :
2016
Weight :
1.437803g
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Channels :
1
Mounting Type :
Surface Mount
Input Capacitance :
360pF
Min Operating Temperature :
-55°C
Datasheets
IRF820
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics IRF820 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Channels:1, Mounting Type:Surface Mount, IRF820 pinout, IRF820 datasheet PDF, IRF820 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics IRF820 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics IRF820


N-Channel Tube 3Ohm @ 1.5A, 10V ±20V 360pF @ 25V 24nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF820S Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 360pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.5A amps.It is [33 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 3Ohm.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRF820S Features


a continuous drain current (ID) of 2.5A
the turn-off delay time is 33 ns
single MOSFETs transistor is 3Ohm
a 500V drain to source voltage (Vdss)


IRF820S Applications


There are a lot of Vishay Siliconix
IRF820S applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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