IRF7465TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

5.5 V

Rds On (Max) @ Id, Vgs :

280m Ω @ 1.14A, 10V

Voltage - Rated DC :

150V

Transistor Element Material :

SILICON

Fall Time (Typ) :

9 ns

Drain to Source Breakdown Voltage :

150V

Dual Supply Voltage :

150V

Power Dissipation :

2.5W

Published :

2001

Terminal Position :

Dual

Length :

4.9784mm

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Number of Elements :

1

Contact Plating :

Tin

Radiation Hardening :

No

ECCN Code :

EAR99

Termination :

SMD/SMT

Turn On Delay Time :

7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

1.9A Ta

Height :

1.4986mm

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Rise Time :

1.2ns

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Element Configuration :

Single

Number of Pins :

8

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Terminal Form :

Gull wing

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.5W Ta

Width :

3.9878mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Threshold Voltage :

5.5V

Turn-Off Delay Time :

10 ns

Factory Lead Time :

12 Weeks

REACH SVHC :

No SVHC

Lead Free :

Contains Lead, Lead Free

Continuous Drain Current (ID) :

1.9A

Operating Temperature :

-55°C~150°C TJ

Current Rating :

1.9A

Resistance :

280mOhm