IRF7402TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.5W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2.5W

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 15V

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Drain-source On Resistance-Max :

0.035Ohm

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

35m Ω @ 4.1A, 4.5V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Number of Pins :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

20V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

5.1 ns

Voltage - Rated DC :

20V

Terminal Position :

Dual

Published :

1999

Vgs(th) (Max) @ Id :

700mV @ 250μA

Current Rating :

6.8A

Vgs (Max) :

±12V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Additional Feature :

FAST SWITCHING

Height :

1.4986mm

Turn-Off Delay Time :

24 ns

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

54A

Continuous Drain Current (ID) :

6.8A

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Series :

HEXFET®

Width :

3.9878mm

Rise Time :

47ns

Current - Continuous Drain (Id) @ 25°C :

6.8A Ta

Mounting Type :

Surface Mount

Lead Free :

Contains Lead, Lead Free

Number of Elements :

1

Fall Time (Typ) :

32 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

12V

Length :

4.9784mm

Number of Terminations :

8