IRF6898MTRPBF
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- Mfr.Part #
- IRF6898MTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MX
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 35A DIRECTFET
- Stock
- 263
- In Stock ：
- 263
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -40°C~150°C TJ
- Mount :
- Surface Mount
- Factory Lead Time :
- 10 Weeks
- Drain to Source Breakdown Voltage :
- 25V
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Package / Case :
- DirectFET™ Isometric MX
- Case Connection :
- DRAIN
- FET Feature :
- Schottky Diode (Body)
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2012
- JESD-30 Code :
- R-XBCC-N3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation :
- 78W
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 4.5V
- Rds On (Max) @ Id, Vgs :
- 1.1m Ω @ 35A, 10V
- Pulsed Drain Current-Max (IDM) :
- 280A
- Vgs(th) (Max) @ Id :
- 2.1V @ 100μA
- REACH SVHC :
- No SVHC
- Series :
- HEXFET®
- Number of Terminations :
- 3
- Number of Pins :
- 7
- Gate to Source Voltage (Vgs) :
- 16V
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Turn On Delay Time :
- 18 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Fall Time (Typ) :
- 19 ns
- Threshold Voltage :
- 1.6V
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±16V
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 5435pF @ 13V
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 35A Ta 213A Tc
- Continuous Drain Current (ID) :
- 35A
- Rise Time :
- 46ns
- Turn-Off Delay Time :
- 24 ns
- Power Dissipation-Max :
- 2.1W Ta 78W Tc
- Datasheets
- IRF6898MTRPBF
N-Channel Tape & Reel (TR) 1.1m Ω @ 35A, 10V ±16V 5435pF @ 13V 62nC @ 4.5V DirectFET™ Isometric MX
IRF6898MTRPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5435pF @ 13V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 25V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 25V.As a result of its turn-off delay time, which is 24 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 280A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 18 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 16VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1.6V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IRF6898MTRPBF Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 24 ns
based on its rated peak drain current 280A.
a threshold voltage of 1.6V
IRF6898MTRPBF Applications
There are a lot of Infineon Technologies
IRF6898MTRPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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