IRF6898MTRPBF
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- Mfr.Part #
- IRF6898MTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MX
- Datasheet
- Download
- Description
- IRF6898 - 12V-300V N-CHANNEL POW
- Stock
- 263
- In Stock ：
- 263
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 280A
- Series :
- HEXFET®
- Vgs(th) (Max) @ Id :
- 2.1V @ 100μA
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 4.5V
- Vgs (Max) :
- ±16V
- Number of Pins :
- 7
- Case Connection :
- DRAIN
- Package / Case :
- DirectFET™ Isometric MX
- Factory Lead Time :
- 10 Weeks
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Turn On Delay Time :
- 18 ns
- Operating Temperature :
- -40°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 16V
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 19 ns
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Threshold Voltage :
- 1.6V
- Drain to Source Breakdown Voltage :
- 25V
- Continuous Drain Current (ID) :
- 35A
- FET Feature :
- Schottky Diode (Body)
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 5435pF @ 13V
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Power Dissipation :
- 78W
- Current - Continuous Drain (Id) @ 25°C :
- 35A Ta 213A Tc
- Turn-Off Delay Time :
- 24 ns
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 2.1W Ta 78W Tc
- Rds On (Max) @ Id, Vgs :
- 1.1m Ω @ 35A, 10V
- Published :
- 2012
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- JESD-30 Code :
- R-XBCC-N3
- Rise Time :
- 46ns
- Datasheets
- IRF6898MTRPBF
N-Channel Tape & Reel (TR) 1.1m Ω @ 35A, 10V ±16V 5435pF @ 13V 62nC @ 4.5V DirectFET™ Isometric MX
IRF6898MTRPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5435pF @ 13V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 25V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 25V.As a result of its turn-off delay time, which is 24 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 280A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 18 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 16VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1.6V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IRF6898MTRPBF Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 24 ns
based on its rated peak drain current 280A.
a threshold voltage of 1.6V
IRF6898MTRPBF Applications
There are a lot of Infineon Technologies
IRF6898MTRPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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