IRF6894MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

4160pF @ 13V

Resistance :

1.3MOhm

Number of Pins :

7

Current - Continuous Drain (Id) @ 25°C :

32A Ta 160A Tc

Terminal Position :

BOTTOM

Operating Temperature :

-40°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

260A

FET Feature :

Schottky Diode (Body)

Mounting Type :

Surface Mount

Factory Lead Time :

13 Weeks

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

32A

Drain to Source Breakdown Voltage :

25V

Radiation Hardening :

No

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

16V

Mount :

Surface Mount

Fall Time (Typ) :

14 ns

Turn On Delay Time :

16 ns

Drain Current-Max (Abs) (ID) :

33A

Turn-Off Delay Time :

20 ns

Published :

2004

ECCN Code :

EAR99

JESD-609 Code :

e3

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 4.5V

JESD-30 Code :

R-XBCC-N3

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

54W

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

2.1W Ta 54W Tc

Rise Time :

42ns

Vgs(th) (Max) @ Id :

2.1V @ 100μA

FET Type :

N-Channel

Series :

HEXFET®

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Vgs (Max) :

±16V

Transistor Element Material :

SILICON

Package / Case :

DirectFET™ Isometric MX

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

1.3m Ω @ 33A, 10V