IRF6894MTR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

Schottky Diode (Body)

Turn-Off Delay Time :

20 ns

Resistance :

1.3MOhm

Rds On Max :

1.3 MΩ

Fall Time (Typ) :

14 ns

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 4.5V

Continuous Drain Current (ID) :

32A

Lead Free :

Lead Free

Min Operating Temperature :

-40°C

Published :

2011

Number of Pins :

7

Package / Case :

DirectFET™ Isometric MX

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.3mOhm @ 33A, 10V

Supplier Device Package :

DIRECTFET™ MX

Vgs (Max) :

±16V

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Rise Time :

42ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

4160pF @ 13V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Drain to Source Resistance :

1.7MOhm

Operating Temperature :

-40°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

32A Ta 160A Tc

Drain to Source Voltage (Vdss) :

25V

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.1W Ta 54W Tc

Drain to Source Breakdown Voltage :

25V

Turn On Delay Time :

16 ns

Gate to Source Voltage (Vgs) :

16V

Power Dissipation :

2.1W

Mount :

Surface Mount

FET Type :

N-Channel

Input Capacitance :

4.16nF

Vgs(th) (Max) @ Id :

2.1V @ 100μA