IRF6893MTRPBF
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- Mfr.Part #
- IRF6893MTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MX
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 29A DIRECTFET
- Stock
- 32,173
- In Stock ：
- 32,173
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3480pF @ 13V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Number of Pins :
- 7
- Current - Continuous Drain (Id) @ 25°C :
- 29A Ta 168A Tc
- Vgs (Max) :
- ±16V
- Vgs(th) (Max) @ Id :
- 2.1V @ 100μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Operating Temperature :
- -40°C~150°C TJ
- Series :
- HEXFET®
- Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 19 ns
- Continuous Drain Current (ID) :
- 29A
- FET Type :
- N-Channel
- Turn On Delay Time :
- 18 ns
- Drain to Source Breakdown Voltage :
- 25V
- Rds On (Max) @ Id, Vgs :
- 1.6m Ω @ 29A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 4.5V
- Published :
- 2012
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rise Time :
- 83ns
- Fall Time (Typ) :
- 33 ns
- Number of Elements :
- 1
- Power Dissipation :
- 2.1W
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Package / Case :
- DirectFET™ Isometric MX
- Gate to Source Voltage (Vgs) :
- 16V
- Factory Lead Time :
- 13 Weeks
- Power Dissipation-Max :
- 2.1W Ta 69W Tc
- Datasheets
- IRF6893MTRPBF
N-Channel Tape & Reel (TR) 1.6m Ω @ 29A, 10V ±16V 3480pF @ 13V 38nC @ 4.5V DirectFET™ Isometric MX
IRF6893MTRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3480pF @ 13V.This device conducts a continuous drain current (ID) of 29A, which is the maximum continuous current transistor can conduct.Using VGS=25V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 25V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 19 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 16V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRF6893MTRPBF Features
a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 19 ns
IRF6893MTRPBF Applications
There are a lot of Infineon Technologies
IRF6893MTRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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