IRF6811STRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 19A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Fall Time (Typ) :

5.5 ns

Avalanche Energy Rating (Eas) :

32 mJ

Number of Elements :

1

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1590pF @ 13V

Drain Current-Max (Abs) (ID) :

74A

Contact Plating :

Copper, Silver, Tin

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

11 ns

Lead Free :

Lead Free

Package / Case :

DirectFET™ Isometric SQ

Number of Channels :

1

Factory Lead Time :

13 Weeks

JESD-609 Code :

e1

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-40°C~150°C TJ

Height :

700μm

Gate to Source Voltage (Vgs) :

16V

Vgs (Max) :

±16V

Current - Continuous Drain (Id) @ 25°C :

19A Ta 74A Tc

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

2.1V @ 35µA

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Terminal Form :

NO LEAD

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

19A

Turn On Delay Time :

8.7 ns

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

ECCN Code :

EAR99

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Max Junction Temperature (Tj) :

150°C

Drain to Source Breakdown Voltage :

25V

Mount :

Surface Mount

Power Dissipation :

2.1W

Number of Terminations :

2

Power Dissipation-Max :

2.1W Ta 32W Tc

Rise Time :

19ns

Published :

2005

Number of Pins :

6

FET Type :

N-Channel

JESD-30 Code :

R-XBCC-N2

Case Connection :

DRAIN

Resistance :

3.7mOhm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED