IRF6811STRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

16V

Series :

HEXFET®

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1590pF @ 13V

Operating Temperature :

-40°C~150°C TJ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Pins :

6

Rise Time :

19ns

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 19A, 10V

Contact Plating :

Copper, Silver, Tin

Mounting Type :

Surface Mount

Published :

2005

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

2.1W

Number of Terminations :

2

Continuous Drain Current (ID) :

19A

Drain Current-Max (Abs) (ID) :

74A

Terminal Position :

BOTTOM

Vgs(th) (Max) @ Id :

2.1V @ 35µA

FET Type :

N-Channel

Qualification Status :

Not Qualified

Package / Case :

DirectFET™ Isometric SQ

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Junction Temperature (Tj) :

150°C

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

32 mJ

Case Connection :

DRAIN

Height :

700μm

Turn-Off Delay Time :

11 ns

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

8.7 ns

Terminal Form :

NO LEAD

Number of Elements :

1

JESD-609 Code :

e1

JESD-30 Code :

R-XBCC-N2

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

2.1W Ta 32W Tc

Number of Channels :

1

Factory Lead Time :

13 Weeks

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Fall Time (Typ) :

5.5 ns

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±16V

Resistance :

3.7mOhm

Current - Continuous Drain (Id) @ 25°C :

19A Ta 74A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE