IRF6811STR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-40°C

Turn-Off Delay Time :

11 ns

Rds On Max :

3.7 mΩ

Vgs (Max) :

±16V

Operating Temperature :

-40°C~150°C TJ

Vgs(th) (Max) @ Id :

2.1V @ 35µA

Drain to Source Voltage (Vdss) :

25V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Number of Elements :

1

Power Dissipation :

2.1W

Mount :

Surface Mount

FET Type :

N-Channel

Resistance :

3.7mOhm

Packaging :

Tape and Reel (TR)

Published :

2011

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Supplier Device Package :

DIRECTFET™ SQ

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

3.7mOhm @ 19A, 10V

Series :

HEXFET®

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

19A Ta 74A Tc

Drain to Source Resistance :

5.4mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

16V

Number of Pins :

6

Turn On Delay Time :

8.7 ns

Input Capacitance :

1.59nF

Fall Time (Typ) :

5.5 ns

Power Dissipation-Max :

2.1W Ta 32W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

25V

Continuous Drain Current (ID) :

74A

Input Capacitance (Ciss) (Max) @ Vds :

1590pF @ 13V

Rise Time :

19ns

Package / Case :

DirectFET™ Isometric SQ