IRF6810STRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 16A, 10V

Published :

2011

Number of Pins :

8

ECCN Code :

EAR99

Radiation Hardening :

No

Series :

HEXFET®

Fall Time (Typ) :

4.8 ns

Drain to Source Breakdown Voltage :

25V

Vgs(th) (Max) @ Id :

2.1V @ 25μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Package / Case :

DirectFET™ Isometric S1

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Power Dissipation :

2.1W

Number of Elements :

1

JESD-30 Code :

R-XBCC-N3

Gate to Source Voltage (Vgs) :

16V

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

1038pF @ 13V

Power Dissipation-Max :

2.1W Ta 20W Tc

Operating Temperature :

-40°C~150°C TJ

Terminal Position :

BOTTOM

Turn-Off Delay Time :

11 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Mount :

Surface Mount

Factory Lead Time :

13 Weeks

Drain-source On Resistance-Max :

0.0052Ohm

Turn On Delay Time :

8.2 ns

Case Connection :

DRAIN

Vgs (Max) :

±16V

Continuous Drain Current (ID) :

16A

FET Type :

N-Channel

Rise Time :

22ns

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

16A Ta 50A Tc

Drain Current-Max (Abs) (ID) :

50A

RoHS Status :

ROHS3 Compliant