IRF6798MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

78W

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Mounting Type :

Surface Mount

JESD-30 Code :

R-XBCC-N3

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

300A

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Length :

6.35mm

Published :

2008

Drain-source On Resistance-Max :

0.0013Ohm

Turn-Off Delay Time :

20 ns

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

37A Ta 197A Tc

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

25V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.3m Ω @ 37A, 10V

Fall Time (Typ) :

16 ns

Avalanche Energy Rating (Eas) :

220 mJ

Package / Case :

DirectFET™ Isometric MX

Width :

5.05mm

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

37A

FET Feature :

Schottky Diode (Body)

Terminal Position :

BOTTOM

Operating Temperature :

-40°C~150°C TJ

Drain Current-Max (Abs) (ID) :

197A

Number of Pins :

5

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Input Capacitance (Ciss) (Max) @ Vds :

6560pF @ 13V

Power Dissipation-Max :

2.8W Ta 78W Tc

Turn On Delay Time :

15 ns

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 4.5V

Radiation Hardening :

No

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

HEXFET®

Number of Terminations :

3

Height :

506μm

Rise Time :

31ns