IRF6798MTR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

37A Ta 197A Tc

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

6560pF @ 13V

Threshold Voltage :

1.8V

Length :

6.35mm

Min Operating Temperature :

-40°C

Width :

5.05mm

Operating Temperature :

-40°C~150°C TJ

Turn On Delay Time :

15 ns

Drain to Source Breakdown Voltage :

25V

Power Dissipation :

78W

FET Type :

N-Channel

Published :

2009

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.3mOhm @ 37A, 10V

Turn-Off Delay Time :

20 ns

REACH SVHC :

Unknown

Package / Case :

DirectFET™ Isometric MX

Fall Time (Typ) :

16 ns

Drain to Source Voltage (Vdss) :

25V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

37A

FET Feature :

Schottky Diode (Body)

Number of Pins :

5

Resistance :

2.1MOhm

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Drain to Source Resistance :

2.1MOhm

Rds On Max :

1.3 MΩ

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Nominal Vgs :

1.8 V

Power Dissipation-Max :

2.8W Ta 78W Tc

Rise Time :

31ns

Input Capacitance :

6.56nF

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Max Operating Temperature :

150°C

Height :

506μm

Supplier Device Package :

DIRECTFET™ MX

Series :

HEXFET®