IRF6797MTRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Published :

2009

JESD-609 Code :

e1

Case Connection :

DRAIN

JESD-30 Code :

R-XBCC-N3

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Height :

506μm

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 4.5V

Continuous Drain Current (ID) :

36A

Input Capacitance (Ciss) (Max) @ Vds :

5790pF @ 13V

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Package / Case :

DirectFET™ Isometric MX

Number of Pins :

7

Current - Continuous Drain (Id) @ 25°C :

36A Ta 210A Tc

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

32ns

Length :

6.35mm

Terminal Position :

BOTTOM

Rds On (Max) @ Id, Vgs :

1.4m Ω @ 38A, 10V

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Operating Temperature :

-40°C~150°C TJ

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

2.8W Ta 89W Tc

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Fall Time (Typ) :

15 ns

ECCN Code :

EAR99

Additional Feature :

LOW CONDUCTION LOSS

Turn On Delay Time :

22 ns

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

300A

Power Dissipation :

89W

Mount :

Surface Mount

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

5.05mm

Turn-Off Delay Time :

20 ns

Avalanche Energy Rating (Eas) :

260 mJ

Drain to Source Breakdown Voltage :

25V

Radiation Hardening :

No

Transistor Element Material :

SILICON